Boundary Element Simulation of Electromigration
نویسنده
چکیده
A primary cause of failure in microelectronic devices is void growth and movement in aluminum wire interconnects. In addition to thermal and mechanical stress, void evolution is driven by the electric field in the wire. Two new boundary element techniques, approximate Green's functions and Galerkin surface derivative evaluation, have been developed to assist in modeling the electromigration problem. These methods improve the efficiency of the simulations, and comparison with finite element calculations shows that they are highly accurate.
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